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M58PR512LE 데이터시트(PDF) 71 Page - STMicroelectronics

부품명 M58PR512LE
상세설명  256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
PDF  119 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58PR512LE 데이터시트(HTML) 71 Page - STMicroelectronics

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M58PR256LE, M58PR512LE, M58PR001LE
DC and AC parameters
71/119
Table 27.
DC characteristics - currents
Symbol
Parameter
Test condition(1)
Typ
Max
Unit
ILI
Input leakage current
0 V
≤ V
IN ≤ VDDQ
±1
µA
ILO
Output leakage current
0 V
≤ V
OUT ≤ VDDQ
±1
µA
IDD1
Supply current
Asynchronous read (f=5 MHz)
E = VIL, G = VIH
25
35
mA
Supply current
Page read (f=13 MHz)
11
15
mA
Supply current
Synchronous read (f=66 MHz)
8 word
22
32
mA
16 word
19
26
mA
Continuous
25
34
mA
Supply current
Synchronous read (f = 108 MHz)
8 word
26
36
mA
16 word
23
30
mA
Continuous
30
42
mA
IDD2
Supply current (reset)
RP = VSS ± 0.2 V
256 Mbit
35
95
µA
512 Mbit
50
120
1 Gbit
70
224
IDD3
Supply current (standby)
E = VDDQ ± 0.2 V
K = VSS
256 Mbit
35
95
µA
512 Mbit
50
120
1 Gbit
70
224
IDD4
(1)
Supply current (automatic
standby)
E = VIL, G = VIH,
RP = VIH
256 Mbit
35
95
µA
512 Mbit
50
120
1 Gbit
70
224
IDD5
(2)
Supply current (deep power-
down)
245
µA
IDD6
(3)
Supply current (program)
VPP = VPPH, VPP = VDD
35
50
mA
Supply current (erase)
VPP = VPPH, VPP = VDD
35
50
mA
Supply current (blank check)
VPP = VPPH, VPP = VDD
35
50
mA
IDD7
(3)(4)
Supply current
(dual operations)
Program/erase in one bank,
asynchronous read in
another bank
60
80
mA
Program/erase in one bank,
synchronous read
(continuous, f = 108 MHz) in
another bank
65
92
mA
IDD8
(3)
Supply current program/ erase
suspended (standby)
E = VDDQ ±0.2 V
K = VSS
256 Mbit
35
95
µA
512 Mbit
50
120
1 Gbit
70
224



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