M58PR512LE datasheet(94/119 Pages) STMICROELECTRONICS

부품명	M58PR512LE

상세설명	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

PDF	119 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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94 / 119 page

Common Flash interface

M58PR256LE, M58PR512LE, M58PR001LE

94/119

Table 44.

CFI query system interface information

Offset

Data

Description

Value

01Bh

0017h

VDD logic supply minimum program/erase or write voltage

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 millivolts

1.7 V

01Ch

0020h

VDD logic supply maximum program/erase or write voltage

bit 7 to 4 BCD value in volts

bit 3 to 0 BCD value in 100 millivolts

01Dh

0085h

VPP [programming] supply minimum program/erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 millivolts

8.5 V

01Eh

0095h

VPP [programming] supply maximum program/erase voltage

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 millivolts

9.5 V

01Fh

0006h

Typical timeout per single byte/word program = 2n µs

64 µs

020h

000Bh

Typical timeout for buffer program = 2n µs

2048 µs

021h

000Ah

Typical timeout per individual block erase = 2n ms

1 s

022h

0000h

Typical timeout for full chip erase = 2n ms

023h

0002h

Maximum timeout for word program = 2n times typical

256 µs

024h

0002h

Maximum timeout for buffer program = 2n times typical

8192 µs

025h

0002h

Maximum timeout per individual block erase = 2n times typical

4 s

026h

0000h

Maximum timeout for chip erase = 2n times typical

M58PR512LE 데이터시트(PDF) 94 Page - STMicroelectronics

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