M58PR512LE datasheet(101/119 Pages) STMICROELECTRONICS

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M58PR512LE 데이터시트(PDF) 101 Page - STMicroelectronics

부품명	M58PR512LE

상세설명	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories

PDF	119 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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101 / 119 page

M58PR256LE, M58PR512LE, M58PR001LE

Common Flash interface

101/119

The variable P is a pointer which is defined at CFI offset 015h.

Bank regions. There is one EFA bank region.

(P+4A)h = 154h

00h

Bank region 1 (Erase block type 1) programming region information

Bit 0-7: aligned size of programming region in bytes

Bit 8-14: reserved

Bit 15: legacy Flash operation (ignore bit 0-7)

Bit 16-23: control mode valid size in bytes

Bit 24-31: reserved

Bit 32-39: control mode invalid size in bytes

Bit 40-46: reserved

Bit 47: legacy Flash operation (ignore bit 16-23 and 32-39)

(P+4B)h = 155h

80h

(P+4C)h = 156h

00h

(P+4D)h = 157h

00h

(P+4E)h = 158h

00h

(P+4F)h = 159h

80h

Table 52.

Extended Flash array bank and erase block region 1 information

Offset(1)

Data

Description

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