STM32H533CE datasheet(122/231 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32H533xx

122/231

DS14539 Rev 1

Note:

For information on selecting the crystal, refer to AN2867 “Oscillator design guide for ST

microcontrollers”, available from www.st.com.

Figure 19. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT, and it is

forbidden to add one.

5.3.8

Internal clock source characteristics

The parameters given in Table 43 to Table 46 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 20.

48 MHz high-speed internal RC oscillator (HSI48)

Gmcritmax

Maximum critical crystal

LSEDRV[1:0] = 01

Medium low drive capability

0.75

µA/V

LSEDRV[1:0] = 10

Medium high drive capability

1.7

LSEDRV[1:0] = 11

High drive capability

2.7

tSU(LSE)(3) Startup time

VDD is stabilized

1. Specified by design - Not tested in production.

2. Refer to the note and caution paragraphs below the table, and to AN2867 “Oscillator design guide for ST

microcontrollers”.

tSU(LSE) is the startup time measured from the moment it is enabled (by software) to when a stabilized

32.768 kHz oscillation is reached. This value is measured for a standard crystal and can vary significantly

with the crystal manufacturer

Table 42. Low-speed external user clock characteristics(1) (continued)

Symbol

Parameter

Conditions(2)

Min

Typ

Max

Unit

ai17531d

STM32

OSC32_OUT

fLSE

CL1

32.768 kHz

resonator

Bias

controlled

gain

OSC32_IN

CL2

Resonator with

integrated

capacitors

Table 43. HSI48 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI48

HSI48 frequency

VDD = 3.3 V, TJ= 30 °C 47.5(1)

48.5(1) MHz

TRIM(3)

User trimming step

0.175

0.250

USER TRIM

COVERAGE(2)

User trimming coverage

±32 steps

±4.70

±5.6

DuCy(HSI48)(3)

Duty cycle

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