CMV2000 datasheet(21/87 Pages) AMSOSRAM

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CMV2000

Functional description

Datasheet

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• v8-00 • 2025-Jul-07

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Functional description

7.1

Sensor architecture

Figure 2 shows the image sensor architecture. The internal sequencer generates the

necessary signals for image acquisition. The image is stored in the pixel (global shutter) and is

then read out sequentially, row-by-row. On the pixel output, an analog gain of x1, x1.2, x1.4

and x1.6 is possible. The pixel values then passes to a column ADC cell, in which ADC

conversion is performed. The digital signals are then read out over multiple LVDS channels.

Each LVDS channel reads out 128 adjacent columns of the array. In the Y-direction, rows of

interest are selected through a row-decoder which allows a flexible windowing. Control

registers are foreseen for the programming of the sensor. These register parameters are

uploaded via a four-wire SPI interface. A temperature sensor which can be read out over the

SPI interface is also included.

7.1.1

Pixel array

The pixel array consists of 2048 x 1088 square global shutter pixels with a pitch of 5.5 µm

(5.5 μm x 5.5 μm). This results in an optical area of close to 2/3 optical inch (12.7 mm). This

means that most off-the-shelf C-mount lenses can be used.

The pixels are designed to achieve maximum sensitivity with low noise and low PLS

specifications. Micro lenses are placed on top of the pixels for improved fill factor and quantum

efficiency (>50%).

7.1.2

Analog front end

The analog front end consists of 2 major parts, a column amplifier block and a column ADC

block.

The column amplifier prepares the pixel signal for the column ADC and applies analog gain if

desired (programmable using the SPI interface). The column ADC converts the analog pixel

value to a 10 or 12-bit value. A digital offset can also be applied to the output of the column

ADC’s. All gain and offset settings can be programmed using the SPI interface.

CMV2000 데이터시트(PDF) 21 Page - ams-OSRAM AG