H838532H datasheet(171/508 Pages) RENESAS

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Section 6 ROM

Rev. 1.00 May 30, 2008 Page 151 of 484

REJ09B0436-0100

6.7.5

Auto-Erase Mode

1. Auto-erase mode supports only entire memory erasing.

2. Do not perform a command write during auto-erasing.

3. Confirm normal end of auto-erasing by checking I/O6. Alternatively, status read mode can also

be used for this purpose (I/O7 status polling uses the auto-erase operation end decision pin).

4. Status polling I/O6 and I/O7 pin information is retained until the next command write. As long

as the next command write has not been performed, reading is possible by enabling

CE and

OE.

5. Table 6.14 shows the AC characteristics.

Table 6.14

AC Characteristics in Auto-Erase Mode

Conditions: V

CC = 3.3 V ±0.3 V, VSS = 0 V, Ta = 25°C ±5°C

Item

Symbol

Min

Max

Unit

Notes

Command write cycle

nxtc

—

µs

Figure 6.12

CE hold time

ceh

—

CE setup time

ces

—

Data hold time

—

Data setup time

—

Write pulse width

wep

—

Status polling start time

ests

—

Status polling access time

spa

—

150

Memory erase time

erase

100

40000

WE rise time

—

WE fall time

—

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