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KM416RD8AS-RBM80 데이터시트(PDF) 50 Page - Samsung semiconductor

부품명 KM416RD8AS-RBM80
상세설명  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 데이터시트(HTML) 50 Page - Samsung semiconductor

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Page 47
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
RSL - Clocking
Figure 53 is a timing diagram which shows the detailed
requirements for the RSL clock signals on the Channel.
The CTM and CTMN are differential clock inputs used for
transmitting information on the DQA and DQB, outputs.
Most timing is measured relative to the points where they
cross. The tCYCLE parameter is measured from the falling
CTM edge to the falling CTM edge. The tCL and tCH param-
eters are measured from falling to rising and rising to falling
edges of CTM. The tCR and tCF rise- and fall-time parame-
ters are measured at the 20% and 80% points.
The CFM and CFMN are differential clock outputs used for
receiving information on the DQA, DQB, ROW and COL
outputs. Most timing is measured relative to the points
where they cross. The tCYCLE parameter is measured from
the falling CFM edge to the falling CFM edge. The tCL and
tCH parameters are measured from falling to rising and rising
to falling edges of CFM. The tCR and tCF rise- and fall-time
parameters are measured at the 20% and 80% points.
The tTR parameter specifies the phase difference that may be
tolerated with respect to the CTM and CFM differential
clock inputs (the CTM pair is always earlier).
Figure 53: RSL Timing - Clock Signals
VCIH
50%
VCIL
80%
20%
CTM
CTMN
VCIH
50%
VCIL
80%
20%
CFM
CFMN
tTR
tCF
tCF
tCR
tCR
tCYCLE
tCL
tCH
tCF
tCF
tCR
tCR
tCYCLE
tCL
tCH
VCM
VX+
VX-
VCM
VX+
VX-



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