KM416RD8AS-RBM80 datasheet(64/64 Pages) SAMSUNG

64 / 64 page

Page 61

KM416RD8AS

Direct RDRAM™

Rev. 0.9 July 1999

Target

Table Of Contents

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Key Timing Parameters/Part Numbers . . . . . . . . . . . 1

Pinouts and Definitions . . . . . . . . . . . . . . . . . . . . . . . 2

Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

General Description . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Packet Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6,7

Field Encoding Summary . . . . . . . . . . . . . . . . . . . . .8,9

DQ Packet Timing . . . . . . . . . . . . . . . . . . . . . . . . . . 10

COLM Packet to D Packet Mapping . . . . . . . . . .10,11

ROW-to-ROW Packet Interaction . . . . . . . . . . . 12, 13

ROW-to-COL Packet Interaction . . . . . . . . . . . . . . . 13

COL-to-COL Packet Interaction . . . . . . . . . . . . . . . . 14

COL-to-ROW Packet Interaction . . . . . . . . . . . . . . . 15

ROW-to-ROW Examples . . . . . . . . . . . . . . . . . . .16,17

Row and Column Cycle Description . . . . . . . . . . . . 17

Precharge Mechanisms . . . . . . . . . . . . . . . . . . . .18,19

Read Transaction - Example . . . . . . . . . . . . . . . . . . 20

Write Transaction - Example . . . . . . . . . . . . . . . . . . 21

Write/Retire - Examples . . . . . . . . . . . . . . . . . . . 22, 23

Interleaved Write - Example. . . . . . . . . . . . . . . . . . . 24

Interleaved Read - Example . . . . . . . . . . . . . . . . . . 25

Interleaved RRWW . . . . . . . . . . . . . . . . . . . . . . . . . 25

Control Register Transactions . . . . . . . . . . . . . . . . . 26

Control Register Packets . . . . . . . . . . . . . . . . . . . . . 27

Initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28-29

Control Register Summary. . . . . . . . . . . . . . . . . 30-37

Power State Management . . . . . . . . . . . . . . . . . 38-41

Refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Current and Temperature Control . . . . . . . . . . . . . . 43

Electrical Conditions . . . . . . . . . . . . . . . . . . . . . . . . 44

Timing Conditions . . . . . . . . . . . . . . . . . . . . . . . .44-45

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . 46

Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . 46

RSL Clocking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

RSL - Receive Timing . . . . . . . . . . . . . . . . . . . . . . . 48

RSL - Transmit Timing . . . . . . . . . . . . . . . . . . . . . . . 49

CMOS - Receive Timing . . . . . . . . . . . . . . . . . . .50-51

CMOS - Transmit Timing . . . . . . . . . . . . . . . . . . .52-53

RSL - Domain Crossing Window . . . . . . . . . . . . . . . 53

Timing Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . 54

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . 55

IDD - Supply Current Profile . . . . . . . . . . . . . . . . . . 55

Capacitance and Inductance . . . . . . . . . . . . . . . .56-57

Edge-Bonded mBGA Package . . . . . . . . . . . . . . . . 58

Edge-Bonded mBGA Package . . . . . . . . . . . . . . . . 59

Glossary of Terms . . . . . . . . . . . . . . . . . . . . . . . .60-61

Direct Rambus and Direct RDRAM are trademarks of

Rambus Inc. Rambus, RDRAM, and the Rambus Logo are

registered trademarks of Rambus Inc.

This document contains advanced information that is subject

to change by Samsung without notice.

Document Version 0.9

Samsung Electronics Co., Ltd.

San #24 Nongseo-Ri, Kiheung-Eup Yongin-City

Kyunggi-Do, KOREA

Telephone: 82-331-209-4519

Fax: 82-2-760-7990

http://www.samsungsemi.com

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