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KM416RD8AS-RBM80 데이터시트(PDF) 58 Page - Samsung semiconductor

부품명 KM416RD8AS-RBM80
상세설명  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 데이터시트(HTML) 58 Page - Samsung semiconductor

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Page 55
KM416RD8AS
Direct RDRAM™
Rev. 0.9 July 1999
Target
Absolute Maximum Ratings
IDD - Supply Current Profile
Table 23: Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
VI,ABS
Voltage applied to any RSL or CMOS pin with respect to Gnd
- 0.3
VDD+0.3
V
VDD,ABS, VDDA,ABS
Voltage on VDD and VDDA with respect to Gnd
- 0.5
VDD+1.0
V
TSTORE
Storage temperature
- 50
100
°C
Table 24: Supply Current Profile
IDD value
RDRAM blocks consuming power @ tCYCLE=2.5ns
a
Min
Max
Unit
IDD,PDN
Self-refresh only for INIT.LSR=0
TBD
300
µA
IDD,PDN,L
Self-refresh only for INIT.LSR= 1
TBD
4.0
mA
IDD,NAP
T/RCLK-Nap
TBD
6.0
mA
IDD,STBY
T/RCLK, ROW-demux
TBD
120
mA
IDD,ATTN
T/RCLK, ROW-demux, COL-demux
TBD
180
mA
IDD,ATTN-W
T/RCLK, ROW-demux,COL-demux,DQ-demux,1
•WR-SenseAmp,4•ACT-Bank
TBD
575
mA
IDD,ATTN-R
T/RCLK, ROW-demux,COL-demux,DQ-mux,1
•RD-SenseAmp,4•ACT-Bank b
TBD
490
mA
a. The CMOS interface consumes power in all power states.
b. This does not include the IOL sink current. The RDRAM dissipates IOL • VOL in each output driver when a logic one is driven.



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