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KM416RD8AS-RBM80 데이터시트(PDF) 53 Page - Samsung semiconductor

부품명 KM416RD8AS-RBM80
상세설명  128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
PDF  64 Pages
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416RD8AS-RBM80 데이터시트(HTML) 53 Page - Samsung semiconductor

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Page 50
KM416RD8AS
Direct RDRAM™
Rev. 0.9July 1999
Target
CMOS - Receive Timing
Figure 56 is a timing diagram which shows the detailed
requirements for the CMOS input signals .
The CMD and SIO0 signals are inputs which receive infor-
mation transmitted by a controller (or by another RDRAM’s
SIO1 output. SCK is the CMOS clock signal driven by the
controller. All signals are high true.
The cycle time, high phase time, and low phase time of the
SCK clock are tCYCLE1, tCH1 and tCL1, all measured at the
50% level. The rise and fall times of SCK, CMD, and SIO0
are tDR1 and tDF1, measured at the 20% and 80% levels.
The CMD signal is sampled twice per tCYCLE1 interval, on
the rising edge (odd data) and the falling edge (even data).
The set/hold window of the sample points is tS1/tH1. The
SCK and CMD timing points are measured at the 50% level.
The SIO0 signal is sampled once per tCYCLE1 interval on the
falling edge. The set/hold window of the sample points is
tS2/tH2. The SCK and SIO0 timing points are measured at the
50% level.
Figure 56: CMOS Timing - Data Signals for Receive
VIH,CMOS
50%
VIL,CMOS
80%
20%
SCK
tS1
CMD
tDR2
tH1
tS1
tH1
even
odd
tDF2
VIH,CMOS
50%
VIL,CMOS
80%
20%
tDR2
tDF2
tCH1
tCL1
tCYCLE1
tS2
SIO0
tDR1
tH2
tDF1
VIH,CMOS
50%
VIL,CMOS
80%
20%



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