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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STW82102B 데이터시트(PDF) 1 Page - STMicroelectronics |
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STW82102B 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 67 page  This is information on a product in full production. March 2012 Doc ID 018516 Rev 2 1/67 1 STW82102B RF down converter with embedded integer-N synthesizer Datasheet −production data Features ■ High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 85 dBc ■ Noise figure: – NF: 10.5 dB ■ Conversion gain – CG: 8 dB ■ RF range: 1425 MHz to 1910 MHz ■ Wide IF amplifier frequency range: 70 MHz to 400 MHz ■ Integrated RF balun with internal matching ■ Dual differential integrated VCOs with automatic center frequency calibration: – LOA: 1500 to 1800 MHz – LOB: 1900 to 2200 MHz ■ Embedded integer-N synthesizer – Dual modulus programmable prescaler (16/17 or 19/20) – Programmable reference frequency divider (10 bits) – Adjustable charge pump current – Digital lock detector – Excellent integrated phase noise – Fast lock time: 150 µs ■ Integrated DAC with dual current output ■ Supply: 3.3 V and 5 V analog, 3.3 V Digital ■ Dual digital bus interface: SPI and I2C bus (fast mode) with 3 bit programmable address (1101A2A1A0) ■ Process: 0.35 µm BICMOS SiGe ■ Operating temperature range -40 to +85oC ■ 44-lead exposed pad VFQFPN package 7x7x1.0 mm Applications ■ Cellular infrastructure equipment: – IF sampling receivers – Digital PA linearization loops ■ Other wireless communication systems. Description The STMicroelectronics STW82102B is an integrated down converter providing 8 dB of gain, 10.5 dB NF, and a very high input linearity by means of its passive mixer. Embedding two wide band auto calibrating VCOs and an integer-N synthesizer, the STW82102B is suitable for both Rx and Tx requirements for cellular infrastructure equipment. The integrated RF balun and internal matching permit direct 50 ohm single-ended interface to RF port. The IF output is suitable for driving 200-ohm impedance filters. By embedding a DAC with dual current output to drive an external PIN diode attenuator, the STW82102B replaces several costly discrete components and offers a significant footprint reduction. The STW82102B device is designed with STMicroelectronics advanced 0.35 µm SiGe process. Its performance is specified over a -40 °C to +85 °C temperature range. Table 1. Device summary Part number Package Packaging STW82102B VFQFPN-44 Tray STW82102BTR VFQFPN-44 Tape and reel VFQFPN-44 www.st.com |
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