STW82102B datasheet(15/67 Pages) STMICROELECTRONICS

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STW82102B

Electrical characteristics

Doc ID 018516 Rev 2

15/67

Electrical characteristics

Note:

Vsupply digital = 3.3 V, Vsupply analog1 = 3.3 V, Vsupply analog2 = 5 V, FRF = 1700 MHz,

FLO = 1550 MHz, TA = +25*C, RF power = 0 dBm, unless otherwise specified.

)

Table 6.

Down converter mixer and IF amplifier electrical characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

FRF

RF Frequency

1425

1910 MHz

FLO

LO Frequency

VCOA divided by 2

1500

1800 MHz

VCOB divided by 2

1900

2200 MHz

FIF

IF Center Frequency(2)

FIF = ABS(FLO-FRF)70

400

MHz

Power Conversion Gain

Rin = 50 ohm, Rout = 200 ohm

RFin = 0 dBm

7.5

8.5

CGΔT

Power Conversion Gain over

Temperature(3)

T= -40 to +85 °C

±0.6

IP1dB

Input P1dB

High current Mode

13.5

dBm

Low current Mode

IIP3

Third-order input intercept

point(4)

High current Mode

25.5

dBm

Low current Mode

19.5

IIP3ΔT

IIP3 variation over

temperature(3)

T= -40 to +85 °C

±0.5

nFRF-nFLO Spurious rejection at IF

(3)

2FRF-2FLO FRFin = -5 dBm,

FIF = 150 MHz

-85

dBc

3FRF-3FLO FRFin = -5 dBm,

FIF = 150 MHz

-76

dBc

NFSSB

Noise figure

High-current mode, MIX = 0011

10.5

Low-current mode, MIX = 0011

10.5

LO to IF Leakage

1xLO

-35

dBm

2xLO

-34

LO to RF Leakage

-27

dBm

RF to IF Isolation

RFRL

RF Return Loss

Matched to 50 ohm

IFRL

IF Return Loss

Matched to 200 ohm

Gain Flatness for TX

observation path(5)

Maximum deviation from Fc over ±10

MHz. For any Fc within each TX

observation path band.

-0.05

+0.05 dB

Maximum deviation from Fc over ±30

MHz. For any Fc within each TX

observation path band.

-0.10

+0.10 dB

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