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STM32F102X8 데이터시트(PDF) 46 Page - STMicroelectronics

부품명 STM32F102X8
상세설명  Medium-density USB access line, ARM-based 32b MCU with 64/128KB Flash, USB FS, 6 timers, ADC & 8 com. interfaces
PDF  80 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F102X8 데이터시트(HTML) 46 Page - STMicroelectronics

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Electrical characteristics
STM32F102x8, STM32F102xB
46/80
DocID15056 Rev 5
Note:
For CL1 and CL2 it is recommended to use high-quality ceramic capacitors in the 5 pF to
15 pF range selected to match the requirements of the crystal or resonator. CL1 and CL2,
are usually the same size. The crystal manufacturer typically specifies a load capacitance
which is the series combination of CL1 and CL2.
Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray
where Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it
is between 2 pF and 7 pF.
Caution:
To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended
to use a resonator with a load capacitance CL
≤ 7 pF. Never use a resonator with a load
capacitance of 12.5 pF.
Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF,
then CL1 = CL2 = 8 pF.
Figure 19. Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in Table 24 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
ai14978b
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F102xx
32.768 KH z
resonator
Bias
controlled
gain
CL2
Resonator with
integrated capacitors
Table 23. HSI oscillator characteristics(1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
DuCy(HSI) Duty cycle
45
55
%
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
1(3)
%
Factory-
calibrated(4)(5)
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
tsu(HSI)(4)
HSI oscillator
startup time
12
µs
IDD(HSI)(4)
HSI oscillator power
consumption
80
100
µA



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