STM32F102X8 datasheet(48/80 Pages) STMICROELECTRONICS

48 / 80 page

Electrical characteristics

STM32F102x8, STM32F102xB

48/80

DocID15056 Rev 5

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 85 °C unless otherwise specified.

Table 26. PLL characteristics

Symbol

Parameter

Value

Unit

Min(1)

Typ

Max(1)

1. Based on characterization, not tested in production.

fPLL_IN

PLL input clock(2)

2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

18.0

MHz

PLL input clock duty cycle

fPLL_OUT

PLL multiplier output clock

MHz

tLOCK

PLL lock time

200

µs

Jitter

Cycle-to-cycle jitter

300

Table 27. Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by design, not tested in production.

Typ

Max(1)

Unit

tprog

16-bit programming time

TA = –40 to +85 °C

52.5

µs

tERASE

Page (1 KB) erase time

TA = –40 to +85 °C

tME

Mass erase time

TA = –40 to +85 °C

IDD

Supply current

Read mode

fHCLK = 48 MHz with 2

wait states, VDD = 3.3 V

Write / Erase modes

fHCLK = 48 MHz, VDD =

3.3 V

5mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

Table 28. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Based on characterization not tested in production.

Typ

Max

NEND

Endurance

kcycles

tRET

Data retention

TA = 85 °C, 1000 cycles

Years

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