STM32F102X8 datasheet(47/80 Pages) STMICROELECTRONICS

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STM32F102x8, STM32F102xB

Electrical characteristics

low-speed internal (LSI) RC oscillator

Wakeup time from low-power mode

The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC

oscillator. The clock source used to wake up the device depends from the current operating

mode:

•

Stop or Standby mode: the clock source is the RC oscillator

•

Sleep mode: the clock source is the clock that was set before entering Sleep mode.

All timings are derived from tests performed under ambient temperature and VDD supply

voltage conditions summarized in Table 8.

5.3.8

PLL characteristics

The parameters given in Table 27 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 8.

2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the

ST website www.st.com.

3. Guaranteed by design, not tested in production.

4. Based on characterization, not tested in production.

5. The actual frequency of HSI oscillator may be impacted by a reflow, but does not drift out of the specified

range.

Table 24. LSI oscillator characteristics (1)

1. VDD = 3 V, TA = −40 to 85 °C unless otherwise specified.

Symbol

Parameter

Min(2)

2. Based on characterization, not tested in production.

Typ

Max

Unit

fLSI

Frequency

kHz

tsu(LSI)(3)

3. Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)(3) LSI oscillator power consumption

0.65

1.2

µA

Table 25. Low-power mode wakeup timings

Symbol

Parameter

Typ

Unit

tWUSLEEP(1)

1. The wakeup times are measured from the wakeup event to the point at which the user application code

reads the first instruction.

Wakeup from Sleep mode

1.8

µs

tWUSTOP(1)

Wakeup from Stop mode (regulator in run mode)

3.6

µs

Wakeup from Stop mode (regulator in low-power

mode)

5.4

tWUSTDBY(1)

Wakeup from Standby mode

µs

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