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AN3276 데이터시트(PDF) 10 Page - STMicroelectronics

부품명 AN3276
상세설명  ST solution for efficiency improvement in PFC applications
PDF  22 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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The new ST solution - BC2: energy recovery circuit
AN3276
10/22
Doc ID 17975 Rev 1
VNS2 voltage is subtracted from VOUT. This behavior provides the BC
2 circuit with a benefit
since under the low output load, power saving occurs in the system and it can be evaluated
using:
Thus, the BC2 reduces switch-off losses too.
2.2.3
Phase t1 to t2
Figure 10.
Equivalent circuit t1 to t2
At t1+, the boost diode DB turns off, and an overcurrent IRM is stored in the small inductor.
This overcurrent discharges the DB junction capacitance linearly. At the same time, the
voltage polarity across the main inductor changes until it reaches D1 diode conduction. At
this time, the overcurrent IRM is reduced by the transformer ratio m1 and is sent to the main
inductor.
Thus, the current flowing through NS1 contributes to charge the internal coil magnetization
LB at the same time as the Np winding biased by the mains voltage. The IRM current flowing
in D1 decreases down to reach 0 A thanks to the reflected voltage VNS1 that it is given by:
and
To guarantee a soft switching behavior in discontinuous mode, the current in D1 should
reach 0 A before time t3. The tD1_ON time trend supports the PFC application since the IRM
current is the largest when the Vmains voltage in the sinusoidal period is the highest. In
addition, to cancel the D1 recovery current diode effect, the dI/dt_D1 is always low thanks to
the low reflected voltage VNS1 and it is given by:
Unfortunately, during this phase a high reverse voltage is applied across the boost diode DB:
switching
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