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AN3276 데이터시트(PDF) 3 Page - STMicroelectronics |
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AN3276 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 22 page ![]() AN3276 Existing solutions Doc ID 17975 Rev 1 3/22 1 Existing solutions This section describes some existing areas for efficiency improvements in PFC applications. 1.1 Diode switch-on losses Usually, in mass market applications between 200 W and 2 kW, a power factor corrector (PFC) working in continuous conduction mode (CCM) is mandatory. To improve the power converter density, the switching frequency should be increased. Nevertheless, when the switching frequency increases, power dissipation in the power switch/rectifier commutation cells leads to the major switching losses in the PFC. The main power losses occur during turn-on of the power switch due to both the voltage and current crossing area of the MOSFET and the reverse recovery losses [see Section 5: References, 2.] produced by the PN diode as shown in Figure 1. Figure 1. Switch-on losses in PN diode behavior To reduce the losses of the PN rectifier, many semiconductor manufacturers have recently introduced high-voltage Schottky diodes using SiC and GaN technologies. However, it is impossible to completely remove the voltage and current crossing area during transistor turn-on by improving component performance only. t Losses are due to area between I +I and V 0RM DS I+I RM 0 I 0 V DS W ON |
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