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AN3276 데이터시트(PDF) 11 Page - STMicroelectronics

부품명 AN3276
상세설명  ST solution for efficiency improvement in PFC applications
PDF  22 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3276 데이터시트(HTML) 11 Page - STMicroelectronics

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AN3276
The new ST solution - BC2: energy recovery circuit
Doc ID 17975 Rev 1
11/22
This feature requires a specific diode for this application, so ST has developed an optimized
diode with an accurate trade-off between the IRM current value and its breakdown voltage.
2.2.4
Phase t2 to t3
Figure 11.
Equivalent circuit t2 to t3
At t2, the current in D1 reaches 0 A and then the BC
2 works as a conventional power boost
converter. As the power transistor stays on, the current in the main LB and the small L
inductor increases up to I1 at time t3.
2.2.5
Phase t3 to t4
Figure 12.
Equivalent circuit t3 to t4
At t3, the power transistor turns off. At this time the voltage across the MOSFET increases
linearly as its COSS capacitance is charged by the current stored in the small inductor L to
reach conduction in diode D2. No overvoltage stress occurs on the power switch during the
turn off. At the same time, the voltage polarity across the main inductor changes until it
reaches DB diode conduction. As soon as the diodes conduct together, the output current is
shared as shown in Figure 7. The current in D2 starting at I1, decreases due to the reflected
voltage from NS2 to reach 0 A with a low dI/dt. On the other hand, the current in DB rises to
reach the nominal current at t4. This shared current is a benefit for the BC
2 circuit. In the
PFC application working under a lower mains voltage such as 90 V rms, the highest
L
DB
D2
D1
V
V
mains
NS2
NS1
I1
V OUT
TR
+
-
-
+
Cj
Coss
L
DB
D2
D1
V
V
mains
NS2
NS1
I1
V OUT
+
-
-
+



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