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STM32F303VE 데이터시트(PDF) 76 Page - STMicroelectronics

부품명 STM32F303VE
상세설명  Reset and supply management
PDF  184 Pages
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STM32F303VE 데이터시트(HTML) 76 Page - STMicroelectronics

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Electrical characteristics
STM32F303xD STM32F303xE
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DocID026415 Rev 4
6.3.4
Embedded reference voltage
The parameters given in Table 23 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 19.
6.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 13: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to CoreMark code.
Note:
The total current consumption is the sum of IDD and IDDA.
Table 23. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltage
–40 °C < TA < +105 °C 1.16
1.2
1.25
V
–40 °C < TA < +85 °C 1.16
1.2
1.24(1)
1. Data based on characterization results, not tested in production.
V
TS_vrefint
ADC sampling time when
reading the internal
reference voltage
-2.2
-
-
µs
VRERINT
Internal reference voltage
spread over the
temperature range
VDD = 3 V ±10 mV
-
-
10(2)
2. Guaranteed by design, not tested in production.
mV
TCoeff
Temperature coefficient
-
-
-
100(2) ppm/°C
Table 24. Internal reference voltage calibration values
Calibration value name
Description
Memory address
VREFINT_CAL
Raw data acquired at
temperature of 30 °C
VDDA= 3.3 V
0x1FFF F7BA - 0x1FFF F7BB



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