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STM32H723VG 데이터시트(PDF) 118 Page - STMicroelectronics

부품명 STM32H723VG
상세설명  32-bit Arm® Cortex®-M7 550 MHz MCU, up to 1 MB Flash memory, 564 KB RAM, 35 comms peripherals and analog interfaces
PDF  227 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32H723VG 데이터시트(HTML) 118 Page - STMicroelectronics

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Electrical characteristics
STM32H723xE/G
118/227
DS13313 Rev 2
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015 “Software
techniques for improving microcontrollers EMC performance”).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each
sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC
JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Table 46. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs.
[fHSE/fCPU]
Unit
8/550 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C, LQFP176 package,
conforming to IEC61967-2
0.1 to 30 MHz
14
dBµV
30 to 130 MHz
20
130 MHz to 1 GHz
27
1 GHz to 2 GHz
17
EMI Level
4
-
Table 47. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Packages
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = 25 °C conforming to
ANSI/ESDA/JEDEC JS-001
All packages
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device
model)
TA = +25 °C conforming to
ANSI/ESDA/JEDEC JS-002
All LQFP
packages
C1
250
All BGA and
WLCSP packages
C2a
500
1. Guaranteed by characterization results.



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