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PIC16F88-I/SS 데이터시트(PDF) 35 Page - Microchip Technology |
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PIC16F88-I/SS 데이터시트(HTML) 35 Page - Microchip Technology |
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35 / 214 page ![]() 2003 Microchip Technology Inc. Preliminary DS30487B-page 33 PIC16F87/88 An example of the complete four-word write sequence is shown in Example 3-5. The initial address is loaded into the EEADRH:EEADR register pair; the four words of data are loaded using indirect addressing, assuming that a row erase sequence has already been performed. EXAMPLE 3-5: WRITING TO FLASH PROGRAM MEMORY ; This write routine assumes the following: ; 1. The 32 words in the erase block have already been erased. ; 2. A valid starting address (the least significant bits = '00') is loaded into EEADRH:EEADR ; 3. This example is starting at 0x100, this is an application dependent setting. ; 4. The 8 bytes (4 words) of data are loaded, starting at an address in RAM called ARRAY. ; 5. This is an example only, location of data to program is application dependent. ; 6. word_block is located in data memory. BANKSEL EECON1 ;prepare for WRITE procedure BSF EECON1,EEPGD ;point to program memory BSF EECON1,WREN ;allow write cycles BANKSEL word_block MOVLW .4 MOVWF word_block ;prepare for 4 words to be written BANKSEL EEADRH ;Start writing at 0x100 MOVLW 0x01 MOVWF EEADRH ;load HIGH address MOVLW 0x00 MOVWF EEADR ;load LOW address BANKSEL ARRAY MOVLW ARRAY ;initialize FSR to start of data MOVWF FSR LOOP BANKSEL EEDATA MOVF INDF,W ;indirectly load EEDATA MOVWF EEDATA INCF FSR,F ;increment data pointer MOVF INDF,W ;indirectly load EEDATH MOVWF EEDATH INCF FSR,F ;increment data pointer BANKSEL EECON1 MOVLW 0x55 ;required sequence MOVWF EECON2 MOVLW 0xAA MOVWF EECON2 BSF EECON1,WR ;set WR bit to begin write NOP ;instructions here are ignored as processor NOP BANKSEL EEADR INCF EEADR,f ;load next word address BANKSEL word_block DECFSZ word_block,f ;have 4 words been written? GOTO loop ;NO, continue with writing BANKSEL EECON1 BCF EECON1,WREN ;YES, 4 words complete, disable writes BSF INTCON,GIE ;enable interrupts |
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