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M25P40-VMP6TG/X 데이터시트(PDF) 40 Page - STMicroelectronics

부품명 M25P40-VMP6TG/X
상세설명  4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
PDF  53 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M25P40-VMP6TG/X 데이터시트(HTML) 40 Page - STMicroelectronics

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DC and ac parameters
M25P40
40/53
Table 14.
DC characteristics (device grade 3)
Symbol
Parameter
Test condition (in addition to
those in Table 10)
Min(1)
1.
This is preliminary data.
Max(1)
Unit
ILI
Input leakage current
± 2
µA
ILO
Output leakage current
± 2
µA
ICC1
Standby current
S = VCC, VIN = VSS or VCC
100
µA
ICC2
Deep Power-down current
S = VCC, VIN = VSS or VCC
50
µA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9.VCC at 25 MHz,
Q = open
8mA
C = 0.1VCC / 0.9.VCC at 20 MHz,
Q = open
4mA
ICC4
Operating current (PP)
S = VCC
15
mA
ICC5
Operating current (WRSR)
S = VCC
15
mA
ICC6
Operating current (SE)
S = VCC
15
mA
ICC7
Operating current (BE)
S = VCC
15
mA
VIL
Input low voltage
– 0.5
0.3VCC
V
VIH
Input high voltage
0.7VCC
VCC+0.4
V
VOL
Output low voltage
IOL = 1.6 mA
0.4
V
VOH
Output high voltage
IOH = –100 µA
VCC–0.2
V
Table 15.
Instruction times (device grade 6)
Test conditions specified in Table 10 and Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
tW
Write Status Register cycle time
5
15
ms
tPP
(1)
1.
When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1
≤ n ≤
256)
Page Program cycle time (256 bytes)
1.4
5ms
Page Program cycle time (n bytes)
0.4+
n*1/256
tSE
Sector Erase cycle time
1
3
s
tBE
Bulk Erase cycle time
4.5
10
s



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