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M25P40-VMP6TG/X 데이터시트(PDF) 42 Page - STMicroelectronics

부품명 M25P40-VMP6TG/X
상세설명  4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface
PDF  53 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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M25P40-VMP6TG/X 데이터시트(HTML) 42 Page - STMicroelectronics

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DC and ac parameters
M25P40
42/53
Table 19.
AC characteristics (25 MHz operation, device grade 3, VCC min = 2.7 V)
Test conditions specified in Table 10 and Table 17
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock frequency for the following
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, WRDI, RDSR, WRSR
D.C.
25
MHz
fR
Clock frequency for READ instructions
D.C.
20
MHz
tCH
(1)
1.
tCH + tCL must be greater than or equal to 1/ fC
tCLH Clock High time
18
ns
tCL
(1)
tCLL
Clock Low time
18
ns
tCLCH
(2)
2.
Value guaranteed by characterization, not 100% tested in production.
Clock Rise time(3) (peak to peak)
3.
Expressed as a slew-rate.
0.1
V/ns
tCHCL
(2)
Clock Fall time(3) (peak to peak)
0.1
V/ns
tSLCH
tCSS S Active Setup time (relative to C)
10
ns
tCHSL
S Not Active Hold time (relative to C)
10
ns
tDVCH
tDSU Data In Setup time
5
ns
tCHDX
tDH
Data In Hold time
5
ns
tCHSH
S Active Hold time (relative to C)
10
ns
tSHCH
S Not Active Setup time (relative to C)
10
ns
tSHSL
tCSH S Deselect time
100
ns
tSHQZ
(2)
tDIS
Output Disable time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold time
0
ns
tHLCH
HOLD Setup time (relative to C)
10
ns
tCHHH
HOLD Hold time (relative to C)
10
ns
tHHCH
HOLD Setup time (relative to C)
10
ns
tCHHL
HOLD Hold time (relative to C)
10
ns
tHHQX
(2)
tLZ
HOLD to Output Low-Z
15
ns
tHLQZ
(2)
tHZ
HOLD to Output High-Z
20
ns
tWHSL
(4)
4.
Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
Write Protect Setup time
20
ns
tSHWL
(4)
Write Protect Hold time
100
ns
tDP
(2)
S High to Deep Power-down mode
3
µs
tRES1
(2)
S High to Standby Power mode without
Electronic Signature Read
3 or 30(5)
5.
It is 30 µs in devices produced with the “X” process technology (grade 3 devices are only produced using
the “X” process technology). Details of how to find the process letter on the device marking are given in the
Application note AN1995.
µs
tRES2
(2)
S High to Standby Power mode with
Electronic Signature Read
1.8 or 30(5)
µs



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