M25P40-VMP6TGSLASHX datasheet(41/53 Pages) STMICROELECTRONICS

41 / 53 page

M25P40

DC and ac parameters

41/53

Output Hi-Z is defined as the point where data out is no longer driven.

Figure 21.

AC measurement I/O waveform

Table 16.

Instruction times (device grade 3)

Test conditions specified in Table 10 and Table 17

Symbol

Alt.

Parameter

Min.

Typ.(1) (2)

At 85 °C

Preliminary data.

Max.(2)

Unit

Write Status Register cycle time

tPP

(3)

When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are

obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1

≤ n ≤

256)

Page Program cycle time (256 bytes)

1.5

5ms

Page Program cycle time (n bytes)

0.4+

n*1.1/256

tSE

Sector Erase cycle time

tBE

Bulk Erase cycle time

4.5

Table 17.

AC measurement conditions

Symbol

Parameter

Min.

Max.

Unit

Load capacitance

Input rise and fall times

Input pulse voltages

0.2VCC to 0.8VCC

Input timing reference voltages

0.3VCC to 0.7VCC

Output timing reference voltages

VCC / 2

Table 18.

Which AC characteristics to use?

Device grade

VCC = 2.3 V to 3.6 V

VCC = 2.7 V to 3.6 V

Device grade 3

N/A(1)

Not applicable.

AC characteristics at 25 MHz (Table 19)

Device grade 6

AC characteristics at 40 MHz (Table 21) AC characteristics at 50 MHz (Table 20)

AI07455

0.8VCC

0.2VCC

0.7VCC

0.3VCC

Input and Output

Timing Reference Levels

Input Levels

0.5VCC

M25P40-VMP6TG/X 데이터시트(PDF) 41 Page - STMicroelectronics

M25P40-VMP6TG/X 데이터시트(HTML) 41 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

데이터시트 다운로드

링크 URL