STM32WB09XE datasheet(49/73 Pages) STMICROELECTRONICS

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2. XOTUNE programed at center code = 32

3. XOTUNE programed at maximum code = 63

6.3.10

Low speed crystal requirements

Low speed clock can be supplied with an external 32.768 kHz crystal oscillator. Requirements for the external

32.768 kHz crystal are reported in the table below.

Table 29. LSE crystal requirements

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

fNOM

Nominal frequency

32.768

kHz

ESR

Equivalent series resistance

kΩ

Drive level

0.1

µW

Gmcritmax

Maximum critical crystal gm

LSEDRIV[1:0] = 00

Low drive capability

0.50

µA/V

LSEDRIV[1:0] = 01

Medium low drive capability

0.75

LSEDRIV[1:0] = 10

Medium high drive capability

1.70

LSEDRIV[1:0] = 11

High drive capability

2.70

6.3.11

High speed ring oscillator characteristics

Table 30. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

fNOM

Nominal frequency

MHz

6.3.12

Low speed ring oscillator characteristics

Table 31. LSI oscillator characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

fNOM

Nominal frequency

VDD =3 .3 V

Ambient temperature

Typical corner

kHz

ΔFRO_ΔT/FRO

Frequency spread vs. temperature

Standard deviation

140

ppm/ºC

6.3.13

PLL characteristics

Characteristics measured over recommended operating conditions unless otherwise specified.

Table 32. PLL characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

PNSYNTH

RF carrier phase noise

At ±1 MHz offset from carrier

(measured at 2.4 GHz)

-110

dBc/Hz

STM32WB09xE

Electrical characteristics

DS14210 - Rev 6

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