STM32WB09XE datasheet(37/73 Pages) STMICROELECTRONICS

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6.3

Operating conditions

6.3.1

General operating conditions

Table 13. General operating conditions

Symbol

Parameter

Conditions

Min.

Max.

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK0

Internal APB0 clock

fPCLK1

Internal APB1 clock frequency

fPCLK2

Internal APB2 clock frequency

VDD

Standard operating voltage

1.7

3.6

VFBSMPS

SMPS feedback voltage

1.4

3.6

VDDRF

Minimum RF voltage

1.7

3.6

VIN

I/O input voltage

-0.3

VDD+0.3

Power dissipation at TA=105 °C(1)

VFQFPN32 package

Ambient temperature

Maximum power dissipation

-40

105

°C

Junction temperature range

-40

105

1. TA cannot exceed the TJ max.

6.3.2

Summary of main performance

Table 14. Main performance SMPS ON

Symbol

Parameter

Test conditions

Typ.

VDD = 1.8 V

Typ.

VDD = 3.3 V

Unit

ICORE

Core current

consumption

Shutdown

Deepstop, no timer, wakeup

GPIO, RAM0 retained

0.618

0.649

µA

Deepstop, no timer, wakeup

GPIO, all RAM retained

0.767

0.792

Deepstop (32 kHz LSI), RAM0

retained

1.103

1.197

Deepstop (32 kHz LSI), all RAMs

retained

1.245

1.344

Deepstop (32 kHz LSE), RAM0

retained

0.892

0.981

Deepstop (32 kHz LSE), all RAM

retained

0.978

1.074

CPU in Run (64 MHz).

Dhrystone, clock source PLL64

3850

2679

CPU in Run (32 MHz).

Dhrystone, clock source PLL64

2998

2216

CPU in RUN (16 MHz).

Dhrystone, clock source PLL64

2161

1759

CPU in RUN (16 MHz).

Dhrystone, clock source HSE

1726

1523

STM32WB09xE

Electrical characteristics

DS14210 - Rev 6

page 37/73

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