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H838532H 데이터시트(PDF) 143 Page - Renesas Technology Corp |
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H838532H 데이터시트(HTML) 143 Page - Renesas Technology Corp |
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143 / 508 page ![]() Section 6 ROM Rev. 1.00 May 30, 2008 Page 123 of 484 REJ09B0436-0100 6.2.3 Block Configuration Figure 6.2 shows the block configuration of flash memory. The thick lines indicate erasing units, the narrow lines indicate programming units, and the values are addresses. The flash memory is divided into 1 Kbyte × 4 blocks, 28 Kbytes × 1 block, 16 Kbytes × 1 block, 8 Kbytes × 1 block, and 4 Kbytes × 1 block. Erasing is performed in these units. Programming is performed in 128-byte units starting from an address with lower eight bits H'00 or H'80. |
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