SC9RS08KA2 datasheet(30/134 Pages) FREESCALE

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Chapter 4 Memory

SC9RS08KA2 Series Data Sheet, Rev. 1

Freescale Semiconductor

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Up to 1000 program/erase cycles at typical voltage and temperature

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Security feature for Flash

4.6.2

Flash Programming Procedure

Programming of Flash memory is done on a row basis. A row consists of 64 consecutive bytes starting

from addresses $3X00, $3X40, $3X80, or $3XC0. Use the following procedure to program a row of Flash

memory:

1. Apply external VPP.

2. Set the PGM bit. This configures the memory for program operation and enables the latching of

address and data for programming.

3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF, within

the address range of the row to be programmed. (Prior to the data writing operation, the PAGESEL

Flash row).

4. Wait for a time, tnvs.

5. Set the HVEN bit.

6. Wait for a time, tpgs.

7. Write data to the Flash location to be programmed.

8. Wait for a time, tprog.

9. Repeat steps 7 and 8 until all bytes within the row are programmed.

10. Clear the PGM bit.

11. Wait for a time, tnvh.

12. Clear the HVEN bit.

13. After time, trcv, the memory can be accessed in read mode again.

14. Remove external VPP.

This program sequence is repeated throughout the memory until all data is programmed.

NOTE

Flash memory cannot be programmed or erased by software code executed

from Flash locations. To program or erase Flash, commands must be

executed from RAM or BDC commands. User code should not enter wait or

stop during erase or program sequence.

These operations must be performed in the order shown; other unrelated

operations may occur between the steps.

4.6.3

Flash Mass Erase Operation

Use the following procedure to mass erase the entire Flash memory:

1. Apply external VPP.

2. Set the MASS bit in the Flash control register.

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