CY8C53_11 datasheet(90/106 Pages) CYPRESS

90 / 106 page

PRELIMINARY

PSoC® 5: CY8C53 Family Datasheet

Document Number: 001-66237 Rev. *A

Page 90 of 106

Figure 11-51. Clock to Output Performance

11.7 Memory

Specifications are valid for –40 °C

≤ T

A ≤ 85 °C and TJ ≤ 100 °C, except where noted. Specifications are valid for 2.7 V to 5.5 V, except

where noted.

11.7.1 Flash

Table 11-51. Flash DC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

Erase and program voltage

VDDD pin

2.7

–

5.5

Table 11-52. Flash AC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

TWRITE

Row write time (erase + program)

–

TERASE

Row erase time

–

Row program time

–

TBULK

Bulk erase time (256 KB)

–

140

Sector erase time (16 KB)

–

Total device program time

(including SWD and other overhead)

–

seconds

Flash data retention time, retention

period measured from last erase cycle

Average ambient temp.

TA ≤ 55 °C, 100 K erase/program

cycles

–

years

Average ambient temp.

TA ≤ 85 °C, 10 K erase/program

cycles

–

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