STM32F407IE datasheet(84/154 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F405xx, STM32F407xx

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Doc ID 022152 Rev 1

Table 37.

Flash memory endurance and data retention

5.3.13

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the

device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

●

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

●

FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS

through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant

with the IEC 61000-4-4 standard.

Table 36.

Flash memory programming with VPP

(1)

TBD stands for “to be defined”.

Symbol

Parameter

Conditions

Min(2)

Typ

Max(2)

Guaranteed by design, not tested in production.

Unit

tprog

Double word programming

TA = 0 to +40 °C

100(3)

The maximum programming time is measured after 100K erase operations.

µs

tERASE16KB Sector (16 KB) erase time

TBD

tERASE64KB Sector (64 KB) erase time

TBD

tERASE128KB Sector (128 KB) erase time

TBD

tME

Mass erase time

6.8

Vprog

Programming voltage

2.7

3.6

VPP

VPP voltage range

IPP

Minimum current sunk on

the VPP pin

tVPP

(4)

VPP should only be connected during programming/erasing.

Cumulative time during

which VPP is applied

hour

Symbol

Parameter

Conditions

Value

Unit

Min(1)

Based on characterization, not tested in production.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

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