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IMX53IEC 데이터시트(PDF) 32 Page - Freescale Semiconductor, Inc |
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IMX53IEC 데이터시트(HTML) 32 Page - Freescale Semiconductor, Inc |
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32 / 173 page ![]() i.MX53 Applications Processors for Industrial Products, Rev. 6 32 Freescale Semiconductor Electrical Characteristics 4.3.5 LVDS I/O DC Parameters The LVDS interface complies with TIA/EIA 644-A standard. See TIA/EIA STANDARD 644-A, “Electrical Characteristics of Low Voltage Differential Signaling (LVDS) Interface Circuits” for details. Table 16 shows the Low Voltage Differential Signaling (LVDS) DC electrical characteristics. The parameters in Table 16 are guaranteed per the operating ranges in Table 6, unless otherwise noted. 4.4 Output Buffer Impedance Characteristics This section defines the I/O Impedance parameters of the i.MX53 processor for the following I/O types: • General Purpose I/O (GPIO) • Double Data Rate 3 I/O (DDR3) for DDR2/LVDDR2, LPDDR2, and DDR3 modes • Ultra High Voltage I/O (UHVIO) • LVDS I/O NOTE Output driver impedance is measured with “long” transmission line of impedance Ztl attached to I/O pad and incident wave launched into transmission lime. Rpu/Rpd and Ztl form a voltage divider that defines specific voltage of incident wave relative to OVDD. Output driver impedance is calculated from this voltage divider (see Figure 4). Table 16. LVDS DC Electrical Characteristics DC Electrical Characteristics Symbol Test Conditions Min Typ Max Unit Output Differential Voltage VOD Rload = 100 Ω between padP and padN 250 350 450 mV Output High Voltage VOH 1.25 1.375 1.6 V Output Low Voltage VOL 0.9 1.025 1.25 Offset Voltage VOS 1.125 1.2 1.375 |
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