STM8S103F2 datasheet(55/117 Pages) STMICROELECTRONICS

55 / 117 page

Figure 11: External capacitor CEXT

ESR

RLeak

ESL

1. ESR is the equivalent series resistance and ESL is the equivalent inductance.

Supply current characteristics

10.3.2

The current consumption is measured as described in Pin input voltage.

Total current consumption in run mode

10.3.2.1

The MCU is placed under the following conditions:

• All I/O pins in input mode with a static value at VDD or VSS (no load)

• All peripherals are disabled (clock stopped by peripheral clock gating registers) except if

explicitly mentioned.

Subject to general operating conditions for VDD and TA.

Table 21: Total current consumption with code execution in run mode at VDD = 5 V

Unit

Max

(1)

Typ

Conditions

Parameter

Symbol

2.3

HSE crystal osc. (16 MHz)

fCPU = fMASTER =

16 MHz

Supply current

in run mode,

code executed

from RAM

IDD(RUN)

2.35

HSE user ext. clock (16 MHz)

1.7

HSI RC osc. (16 MHz)

0.86

HSE user ext. clock (16 MHz)

fCPU = fMASTER/128 =

125 kHz

0.87

0.7

HSI RC osc. (16 MHz)

0.58

0.46

HSI RC osc. (16 MHz/8)

fCPU = fMASTER/128 =

15.625 kHz

0.55

0.41

LSI RC osc. (128 kHz)

fCPU = fMASTER =

128 kHz

4.5

HSE crystal osc. (16 MHz)

fCPU = fMASTER =

16 MHz

Supply current

in run mode,

code executed

from Flash

4.75

4.3

HSE user ext. clock (16 MHz)

4.5

3.7

HSI RC osc. (16 MHz)

55/117

DocID15441 Rev 9

Electrical characteristics

STM8S103K3 STM8S103F3 STM8S103F2

STM8S103F2 데이터시트(PDF) 55 Page - STMicroelectronics

STM8S103F2 데이터시트(HTML) 55 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

데이터시트 다운로드

링크 URL