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STM8S103F2 데이터시트(PDF) 70 Page - STMicroelectronics

부품명 STM8S103F2
상세설명  Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I²C
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STM8S103F2 데이터시트(HTML) 70 Page - STMicroelectronics

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Memory characteristics
10.3.5
RAM and hardware registers
Table 36: RAM and hardware registers
Unit
Min
Conditions
Parameter
Symbol
V
VIT-max
(2)
Halt mode (or reset)
Data retention mode
(1)
VRM
(1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset)
or in hardware registers (only in halt mode). Guaranteed by design, not tested in production.
(2) Refer to the Operating conditions section for the value of V
IT-max
Flash program memory/data EEPROM memory
Table 37: Flash program memory/data EEPROM memory
Unit
Max
Typ
Min
(1)
Conditions
Parameter
Symbol
V
5.5
-
2.95
fCPU ≤ 16 MHz
Operating voltage
(all modes, execution/
write/erase)
VDD
ms
6.6
6
-
Standard programming time
(including erase) for
tprog
byte/word/block (1 byte/
4 bytes/64 bytes)
3.33
3
-
Fast programming time for
1 block (64 bytes)
3.33
3
-
Erase time for 1 block
(64 bytes)
terase
cycles
-
-
100
000
TA = +85 °C
Erase/write cycles
(2)
(program memory)
NRW
-
1 M
300
000
TA = +125 °C
Erase/write cycles
(data memory)
(2)
years
-
-
20
TRET = 55°C
Data retention (program
and data memory) after 10k
tRET
erase/write cycles at
TA = +55 °C
DocID15441 Rev 9
70/117
STM8S103K3 STM8S103F3 STM8S103F2
Electrical characteristics



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