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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM8S103F2 데이터시트(PDF) 68 Page - STMicroelectronics |
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STM8S103F2 데이터시트(HTML) 68 Page - STMicroelectronics |
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68 / 117 page  Unit Max Typ Min Conditions Parameter Symbol % 1.0 (3) - - User-trimmed with CLK_HSITRIMR register for Accuracy of HSI oscillator ACCHSI given VDD and TA conditions (1) 1.0 - -1.0 VDD = 5 V, TA = 25°C (2) Accuracy of HSI oscillator (factory 2.0 - -2.0 VDD = 5 V, 25 °C ≤ TA ≤ 85 °C calibrated) 3.0 (2) - -3.0 (2) 2.95 ≤ VDD≤ 5.5 V,-40 °C ≤ TA ≤ 125 °C μs 1.0 (3) - - HSI oscillator wakeup time tsu(HSI) including calibration μA 250 (2) 170 - HSI oscillator power IDD(HSI) consumption (1) Refer to application note. (2) Data based on characterization results, not tested in production. (3) Guaranteed by design, not tested in production. DocID15441 Rev 9 68/117 STM8S103K3 STM8S103F3 STM8S103F2 Electrical characteristics |
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