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STM32F303VE 데이터시트(PDF) 159 Page - STMicroelectronics |
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STM32F303VE 데이터시트(HTML) 159 Page - STMicroelectronics |
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159 / 184 page ![]() DocID026415 Rev 4 159/184 STM32F303xD STM32F303xE Electrical characteristics 161 PGA gain Non inverting gain value - -2 - - -4 - - -8 - - -16 - - Rnetwork R2/R1 internal resistance values in PGA mode (2) Gain=2 - 5.4/5.4 - k Ω Gain=4 - 16.2/5.4 - Gain=8 - 37.8/5.4 - Gain=16 - 40.5/2.7 - PGA gain error PGA gain error - -1% - 1% Ibias OPAMP input bias current - - - ±0.2(3) µA PGA BW PGA bandwidth for different non inverting gain PGA Gain = 2, Cload = 50pF, Rload = 4 K Ω -4 - MHz PGA Gain = 4, Cload = 50pF, Rload = 4 K Ω -2 - PGA Gain = 8, Cload = 50pF, Rload = 4 K Ω -1 - PGA Gain = 16, Cload = 50pF, Rload = 4 K Ω -0.5 - en Voltage noise density @ 1KHz, Output loaded with 4 K Ω -109 - @ 10KHz, Output loaded with 4 K Ω -43 - 1. Guaranteed by design, not tested in production. 2. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 3. Mostly TTa I/O leakage, when used in analog mode. Table 87. Operational amplifier characteristics(1) (continued) Symbol Parameter Condition Min Typ Max Unit nV Hz ----------- |
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