STM32F303VE datasheet(161/184 Pages) STMICROELECTRONICS

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STM32F303xD STM32F303xE

Electrical characteristics

161

6.3.23

Temperature sensor characteristics

6.3.24

VBAT monitoring characteristics

Table 88. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

1. Guaranteed by design, not tested in production.

VSENSE linearity with temperature

±1

±2°C

Avg_Slope(1) Average slope

4.0

4.3

4.6

mV/°C

V25

Voltage at 25 °C

1.34

1.43

1.52

tSTART(1)

Startup time

µs

TS_temp(1)(2)

2. Shortest sampling time can be determined in the application by multiple iterations.

ADC sampling time when reading the

temperature

2.2

µs

Table 89. Temperature sensor calibration values

Calibration value name

Description

Memory address

TS_CAL1

TS ADC raw data acquired at

temperature of 30 °C,

VDDA= 3.3 V

0x1FFF F7B8 - 0x1FFF F7B9

TS_CAL2

TS ADC raw data acquired at

temperature of 110 °C

VDDA= 3.3 V

0x1FFF F7C2 - 0x1FFF F7C3

Table 90. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-50

Ratio on VBAT measurement

Er(1)

1. Guaranteed by design, not tested in production.

Error on Q

-1

TS_vbat(1)(2)

2. Shortest sampling time can be determined in the application by multiple iterations.

ADC sampling time when reading the VBAT

1mV accuracy

2.2

µs

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