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L99DZ120 데이터시트(PDF) 45 Page - STMicroelectronics |
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L99DZ120 데이터시트(HTML) 45 Page - STMicroelectronics |
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45 / 162 page ![]() DocID029145 Rev 4 45/162 L99DZ120 Electrical specifications 161 Figure 15. IGHxf ranges 3.4.16 Drain source monitoring external H-bridge The voltages are referred to power ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40°C to 150 °C, unless otherwise specified. 3.4.17 Open-load monitoring external H-bridge The voltages are referred to power ground and currents are assumed positive, when the current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40 °C to 150 °C, unless otherwise specified. Table 22. Drain source monitoring external H-bridge Symbol Parameter Test condition Min. Typ. Max. Unit VSCd1_HB Drain-source threshold voltage 0.375 0,5 0.625 V VSCd2_HB Drain-source threshold voltage 0.6 0,75 0.9 V VSCd3_HB Drain-source threshold voltage 0,85 1 1,15 V VSCd4_HB Drain-source threshold voltage 1,06 1,25 1,43 V VSCd5_HB Drain-source threshold voltage 1,27 1,5 1,73 V VSCd6_HB Drain-source threshold voltage 1,49 1,75 2,01 V VSCd7_HB Drain-source threshold voltage 1,7 2 2,3 V tSCd_HB Drain-source monitor filter time 6 µs tscs_HB Drain-source comparator settling time VS = 13.5 V; VSH = jump from GND to VS 5µs |
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