 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
ST72325AR7-Auto 데이터시트(PDF) 202 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ST72325AR7-Auto 데이터시트(HTML) 202 Page - STMicroelectronics |
|
|
202 / 243 page  Obsolete Product(s) - Obsolete Product(s) Electrical characteristics ST72325xxx-Auto 202/243 Doc ID 13770 Rev 3 19.6.2 Flash memory Warning: Do not connect 12V to VPP before VDD is powered on, as this may damage the device. Table 123. Dual voltage HDFlash memory Symbol Parameter Conditions Min(1) 1. Data based on characterization results, not tested in production Typ Max(1) Unit fCPU Operating frequency Read mode 0 8 MHz Write / Erase mode 1 8 VPP Programming voltage(2) 2. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons. 4.5V < VDD < 5.5V 11.4 12.6 V IDD Supply current(3) 3. Data based on simulation results, not tested in production Run mode (fCPU = 4 MHz) 3 mA Write / Erase 0 Power down mode / HALT 1 10 µA IPP VPP current (3) Read (VPP = 12V) 200 Write / Erase 30 mA tVPP Internal VPP stabilization time 10 µs tRET Data retention TA =55°C 20 years NRW Write erase cycles TA = 85°C 100 cycles TPROG TERASE Programming or erasing temperature range -40 25 85 °C |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
