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AT83C5111 데이터시트(PDF) 69 Page - ATMEL Corporation |
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AT83C5111 데이터시트(HTML) 69 Page - ATMEL Corporation |
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69 / 86 page ![]() 69 AT8xC5111 4190A–8051–11/02 EPROM EPROM Programming Specific algorithm is implemented, use qualified device programmers from third party vendors. EPROM Erasure (Windowed Packages Only) Erasing the EPROM erases the code array, the encryption array and the lock bits return- ing the parts to full functionality. Erasure leaves all the EPROM cells in a 1’s state (FF). Erasure Characteristics The recommended erasure procedure is exposure to ultraviolet light (at 2537 Å) to an integrated dose at least 15 W-sec/cm2. Exposing the EPROM to an ultraviolet lamp of 12,000 µW/cm2 rating for 30 minutes, at a distance of about 25 mm, should be sufficient. An exposure of 1 hour is recommended with most of standard erasers. Erasure of the EPROM begins to occur when the chip is exposed to light with wave- length shorter than approximately 4,000 Å. Since sunlight and fluorescent lighting have wavelengths in this range, exposure to these light sources over an extended time (about 1 week in sunlight, or 3 years in room-level fluorescent lighting) could cause inadvertent erasure. If an application subjects the device to this type of exposure, it is suggested that an opaque label be placed over the window. Signature Bytes Signature Bytes Content The AT8xC5111 has four signature bytes in location 30h, 31h, 60h and 61h. To read these bytes follow the procedure for EPROM signature bytes reading. Table 56. shows the content of the signature byte for the AT8xC5111. Table 1. Signature Bytes Content Location Contents Comment 30h 58h Manufacturer Code: Atmel 31h 57h Family Code: C51 X2 60h 2Eh Product name: AT8xC5111 4K ROM version 60h AEh Product name: AT8xC5111 4K OTP version 61h EFh Product revision number: AT8xC5111 Rev.0 |
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