IMX6SDLCEC datasheet(39/169 Pages) NXP

39 / 169 page

Electrical Characteristics

i.MX 6Solo/6DualLite Applications Processors for Consumer Products, Rev. 9, 11/2018

NXP Semiconductors

4.6

I/O DC Parameters

This section includes the DC parameters of the following I/O types:

•

General Purpose I/O (GPIO)

•

Double Data Rate I/O (DDR) for LPDDR2 and DDR3 modes

•LVDS I/O

•MLB I/O

NOTE

The term ‘OVDD’ in this section refers to the associated supply rail of an

input or output.

Figure 4. Circuit for Parameters Voh and Vol for I/O Cells

Table 21. OSC32K Main Characteristics

Characteristic

Min

Typ

Max

Comments

Fosc

—

32.768 KHz

—

This frequency is nominal and determined mainly by the crystal selected.

32.0 K will work as well.

Current consumption

—

μA—

The 4

μA is the consumption of the oscillator alone (OSC32k). Total supply

consumption will depend on what the digital portion of the RTC consumes.

The ring oscillator consumes 1

μA when ring oscillator is inactive, 20 μA

when the ring oscillator is running. Another 1.5

μA is drawn from vdd_rtc

in the power_detect block. So, the total current is 6.5

μA on vdd_rtc when

the ring oscillator is not running.

Bias resistor

—

14 M

—

This the integrated bias resistor that sets the amplifier into a high gain

state. Any leakage through the ESD network, external board leakage, or

even a scope probe that is significant relative to this value will debias the

amp. The debiasing will result in low gain, and will impact the circuit's ability

to start up and maintain oscillations.

Crystal Properties

Cload

—

10 pF

—

Usually crystals can be purchased tuned for different Cloads. This Cload

value is typically 1/2 of the capacitances realized on the PCB on either side

of the quartz. A higher Cload will decrease oscillation margin, but

increases current oscillating through the crystal.

ESR

—

50 k

100 k

Ω Equivalent series resistance of the crystal. Choosing a crystal with a higher

value will decrease the oscillating margin.

Predriver

pdat

ovdd

pad

nmos (Rpd)

ovss

Voh min

Vol max

pmos (Rpu)

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