HCS08 datasheet(52/316 Pages) NXP

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Chapter 4 Memory

MC9S08SG8 MCU Series Data Sheet, Rev. 8

Freescale Semiconductor

The first byte of a series of sequential bytes being programmed in burst mode will take the same amount

of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst

program time provided that the conditions above are met. In the case the next sequential address is the

beginning of a new row, the program time for that byte will be the standard time instead of the burst time.

This is because the high voltage to the array must be disabled and then enabled again. If a new burst

command has not been queued before the current command completes, then the charge pump will be

disabled and high voltage removed from the array.

Figure 4-3. FLASH Burst Program Flowchart

FCBEF ?

START

WRITE TO FLASH

TO BUFFER ADDRESS AND DATA

WRITE COMMAND (0x25) TO FCMD

YES

FPVIO OR

WRITE 1 TO FCBEF

TO LAUNCH COMMAND

AND CLEAR FCBEF (Note 2)

YES

NEW BURST COMMAND ?

FCCF ?

ERROR EXIT

DONE

Note 2: Wait at least four bus cycles before

FACCERR ?

CLEAR ERROR

FACCERR ?

Note 1: Required only once after reset.

WRITE TO FCDIV (Note 1)

checking FCBEF or FCCF.

FLASH BURST

PROGRAM FLOW

HCS08 데이터시트(PDF) 52 Page - NXP Semiconductors