ECP2 datasheet(64/386 Pages) LATTICE

64 / 386 page

3-12

DC and Switching Characteristics

Lattice Semiconductor

LatticeECP2/M Family Data Sheet

LVDS25E

The top and bottom sides of LatticeECP2/M devices support LVDS outputs via emulated complementary LVCMOS

outputs in conjunction with a parallel resistor across the driver outputs. The scheme shown in Figure 3-1 is one

possible solution for point-to-point signals.

Figure 3-1. LVDS25E Output Termination Example

Table 3-2. LVDS25E DC Conditions

LVCMOS33D

All I/O banks support emulated differential I/O using the LVCMOS33D I/O type. This option, along with the external

resistor network, provides the system designer the ﬂexibility to place differential outputs on an I/O bank with 3.3V

VCCIO. The default drive current for LVCMOS33D output is 12mA with the option to change the device strength to

4mA, 8mA, 16mA or 20mA. Follow the LVCMOS33 speciﬁcations for the DC characteristics of the LVCMOS33D.

Parameter

Description

Typical

Units

VCCIO

Output Driver Supply (+/-5%)

2.50

ZOUT

Driver Impedance

Driver Series Resistor (+/-1%)

158

Driver Parallel Resistor (+/-1%)

140

Receiver Termination (+/-1%)

100

VOH

Output High Voltage

1.43

VOL

Output Low Voltage

1.07

VOD

Output Differential Voltage

0.35

VCM

Output Common Mode Voltage

1.25

ZBACK

Back Impedance

100.5

IDC

DC Output Current

6.03

RS=158 ohms

(±1%)

RS=158 ohms

(±1%)

RP = 140 ohms

(±1%)

RT = 100 ohms

(±1%)

OFF-chip

Transmission line, Zo = 100 ohm differential

VCCIO = 2.5V (±5%)

8 mA

VCCIO = 2.5V (±5%)

ON-chip

OFF-chip ON-chip

8 mA

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