SC9RS08KA2 datasheet(120/134 Pages) FREESCALE

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Appendix A Electrical Characteristics

SC9RS08KA2 Series Data Sheet, Rev. 1

120

Freescale Semiconductor

Table A-9. FLASH Characteristics

Characteristic

Symbol

Min

Typical1

1 Typicals are measured at 25

°C.

Max

Unit

Supply voltage for program/erase

VDD

2.7

—

5.5

Program/Erase voltage

VPP

11.8

12.2

VPP current

Program

Mass erase

IVPP_prog

IVPP_erase

—

200

100

μA

Supply voltage for read operation

0 < fBus < 10 MHz

VRead

1.8

—

5.5

Byte program time

tprog

—

μs

Mass erase time

tme

500

—

Cumulative program HV time2

2 t

hv is the cumulative high voltage programming time to the same row before next erase. Same address can not

be programmed more than twice before next erase.

thv

——

Total cumulative HV time

(total of tme & thv applied to device)

thv_total

—

hours

HVEN to program setup time

tpgs

—

μs

PGM/MASS to HVEN setup time

tnvs

5—

—

μs

HVEN hold time for PGM

tnvh

5—

—

μs

HVEN hold time for MASS

tnvh1

100

—

μs

VPP to PGM/MASS setup time

tvps

—

HVEN to VPP hold time

tvph

—

VPP rise time

3 Fast V

PP rise time may potentially trigger the ESD protection structure, which may result in over current flowing

into the pad and cause permanent damage to the pad. External filtering for the VPP power source is

recommended. An example VPP filter is shown in Figure A-3.

tvrs

200

—

Recovery time

trcv

1—

—

μs

Program/erase endurance

TL to TH = –40°C to + 85°C

—

1000

—

cycles

Data retention

tD_ret

100

—

years

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