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PCIMX515CJM6C 데이터시트(PDF) 55 Page - Freescale Semiconductor, Inc |
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PCIMX515CJM6C 데이터시트(HTML) 55 Page - Freescale Semiconductor, Inc |
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55 / 184 page ![]() Electrical Characteristics i.MX51 Applications Processors for Consumer and Industrial Products, Rev. 1 Freescale Semiconductor 55 Preliminary—Subject to Change Without Notice Figure 31. Mobile DDR SDRAM DQ vs. DQS and SDCLK READ Cycle Timing Diagram Table 44. Mobile DDR SDRAM Read Cycle Parameter Table1 1 Test conditions are: Capacitance 15 pF for DDR PADS. Recommended drive strengths is medium for SDCLK and high for address and controls ID PARAMETER Symbol 200 MHz2 2 SDRAM CLK and DQS related parameters are being measured from the 50% point. that is, high is defined as 50% of signal value and low is defined as 50% as signal value. DDR SDRAM CLK parameters are measured at the crossing point of SDCLK and SDCLK (inverted clock) 166 MHz 133 MHz Unit Min Max Min Max Min Max DD24 DQS - DQ Skew (defines the Data valid window in read cycles related to DQS) tDQSQ — 0.4 — 0.75 — 0.85 ns DD25 DQS DQ in HOLD time from DQS tQH 1.75 — 2.05 — 2.6 — ns DD26 DQS output access time from SDCLK posedge tDQSCK 2 5 2 5.5 2 6.5 ns SDCLK SDCLK_B DQS (input) DQ (input) Data Data Data Data Data Data Data Data DD26 DD24 DD25 |
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