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MPC5606S 데이터시트(PDF) 92 Page - Freescale Semiconductor, Inc

부품명 MPC5606S
상세설명  MPC5606S Microcontroller Data Sheet
PDF  136 Pages
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC5606S 데이터시트(HTML) 92 Page - Freescale Semiconductor, Inc

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MPC5606S Microcontroller Data Sheet, Rev. 6
Freescale Semiconductor
92
3.16
Flash memory electrical characteristics
Table 46. Slow internal RC oscillator (128 kHz) electrical characteristics
Symbol
C
Parameter
Conditions1
1 V
DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 105 °C, unless otherwise specified.
Value
Unit
Min
Typ
Max
fSIRC
CC P Slow internal RC oscillator low
frequency
TA = 25 °C, trimmed
—
128
—
kHz
SR —
—
100
150
SIRCVAR CC C Slow internal RC oscillator variation
across temperature (TA = -40°C to
105°C) and supply with respect to fSIRC
at TA = 25 °C in high frequency
configuration
Trimmed
-10%
+10% kHz
ISIRC
CC D Slow internal RC oscillator low
frequency current
TA = 25 °C, trimmed
—
—
5
µA
tSIRCSU CC C Slow internal RC oscillator start-up time TA = 25 °C, VDD = 5.0 V ± 10%
—
8
12
µs
Table 47. Program and erase specifications
Symbol
C
Parameter
Value
Unit
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram
CC C Double word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
22
50
500
µs
T16kpperase
CC C 16 KB block pre-program and erase time
300
500
5000
ms
T32kpperase
CC C 32 KB block pre-program and erase time
400
600
5000
ms
T128kpperase
CC C 128 KB block pre-program and erase time
800
1300
7500
ms
Teslat
CC D Erase suspend latency
—
30
30
µs



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