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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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A32100DX 데이터시트(PDF) 49 Page - Actel Corporation |
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A32100DX 데이터시트(HTML) 49 Page - Actel Corporation |
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49 / 98 page  49 Hi R e l F P GA s A3 21 00 DX Ti m i n g Ch ar ac te r i st i c s (continued) (Wor s t - C as e M i l i t a r y Cond i t i o n s , V CC = 4.5 V, TJ = 1 25°C) ’–1’ Speed ‘Std’ Speed Parameter Description Min. Max. Min. Max. Units Synchronous SRAM Operations tRC Read Cycle Time 8.8 11.8 ns tWC Write Cycle Time 8.8 11.8 ns tRCKHL Clock High/Low Time 4.4 5.9 ns tRCO Data Valid After Clock High/Low 4.4 5.9 ns tADSU Address/Data Setup Time 2.1 2.8 ns tADH Address/Data Hold Time 0.0 0.0 ns tRENSU Read Enable Setup 0.8 1.1 ns tRENH Read Enable Hold 4.4 5.9 ns tWENSU Write Enable Setup 3.5 4.7 ns tWENH Write Enable Hold 0.0 0.0 ns tBENS Block Enable Setup 3.6 4.8 ns tBENH Block Enable Hold 0.0 0.0 ns Asynchronous SRAM Operations tRPD Asynchronous Access Time 10.6 14.1 ns tRDADV Read Address Valid 11.5 15.3 ns tADSU Address/Data Setup Time 2.1 2.8 ns tADH Address/Data Hold Time 0.0 0.0 ns tRENSUA Read Enable Setup to Address Valid 0.8 1.1 ns tRENHA Read Enable Hold 4.4 5.9 ns tWENSU Write Enable Setup 3.5 4.7 ns tWENH Write Enable Hold 0.0 0.0 ns tDOH Data Out Hold Time 1.6 2.1 ns |
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