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P5021 데이터시트(PDF) 60 Page - NXP Semiconductors

부품명 P5021
상세설명  P5021 QorIQ Integrated Processor Data Sheet
PDF  155 Pages
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P5021 QorIQ Integrated Processor Data Sheet, Rev. 1
Electrical characteristics
Freescale Semiconductor
60
WARNING
Incorrect voltage select settings can lead to irreversible device damage. See Section 3.2,
“Supply power default setting.”
NOTE
From a system standpoint, if any of the I/O power supplies ramp prior to the VDD_CA, or
VDD_PL supplies, the I/Os associated with that I/O supply may drive a logic one or zero
during power-up, and extra current may be drawn by the device.
2.3
Power-down requirements
The power-down cycle must complete such that power supply values are below 0.4 V before a new power-up cycle can be
started.
If performing secure boot fuse programming per Section 2.2, “Power-up sequencing,” it is required that POVDD = GND before
the system is power cycled (PORESET assertion) or powered down (VDD_PL ramp down) per the required timing specified in
Table 5.
VDD_PL and USB_VDD_1P0 must be ramped down simultaneously. USB_VDD_1P8_DECAP should starts ramping down only
after USB_VDD_3P3 is below 1.65 V.
2.4
Power characteristics
This table shows the power dissipations of the VDD_CA, SVDD, and VDD_PL supply for various operating platform clock
frequencies versus the core and DDR clock frequencies for the chip.
Table 6. Power dissipation
Power
Mode
Core
freq
(MHz)
Plat
freq
(MHz)
DDR
data
rate
(MHz)
FM freq
(MHz)
VDD_PL,
SVDD
(V)
VDD_CA
(V)
Junction
temp
(
°C)
Core
and plat-
form
power1
(W)
VDD_PL
power
(W)
VDD_CA
power
(W)
SVDD
power
(W)
Note
Typical
2200
800
1600
600
1.0
1.2
65
23
—
—
—
—
Thermal
90
33
———
—
Maximum
34
17
15
15
2.2
Typical
2000
700
1333
600
1.0
1.1
65
21
—
—
—
—
Thermal
105
30
———
—
Maximum
31
16
13
13
2.2



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