| 전자부품 데이터시트 검색엔진 |
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MPC8555CPXAPF 데이터시트(PDF) 13 Page - Freescale Semiconductor, Inc |
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MPC8555CPXAPF 데이터시트(HTML) 13 Page - Freescale Semiconductor, Inc |
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13 / 88 page ![]() MPC8555E PowerQUICC™ III Integrated Communications Processor Hardware Specifications, Rev. 4 Freescale Semiconductor 13 Power Characteristics 2. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. Any customer design must take these considerations into account to ensure the maximum 105 degrees junction temperature is not exceeded on this device. 3. Typical power is based on a nominal voltage of VDD = 1.2V, a nominal process, a junction temperature of Tj = 105° C, and a Dhrystone 2.1 benchmark application. 4. Thermal solutions will likely need to design to a value higher than Typical Power based on the end application, TA target, and I/O power 5. Maximum power is based on a nominal voltage of VDD = 1.2V, worst case process, a junction temperature of Tj = 105° C, and an artificial smoke test. 6. The nominal recommended VDD = 1.3V for this speed grade. Table 5. Typical I/O Power Dissipation Interface Parameters GVDD (2.5V) OVDD (3.3V) LVDD (3.3V) LVDD (2.5V) Unit Comments DDR I/O CCB = 200 MHz 0.46 W — CCB = 266 Mhz 0.59 W — CCB = 300 Mhz 0.66 W — CCB = 333 Mhz 0.73 W — PCI I/O 64b, 66Mhz 0.14 W — 64b, 33Mhz 0.08 W — 32b, 66Mhz 0.07 W Multiply by 2 if using two 32b ports 32b, 33Mhz 0.04 W Local Bus I/O 32b, 167Mhz 0.30 W — 32b, 133Mhz 0.24 W — 32b, 83Mhz 0.16 W 32b, 66Mhz 0.13 W — 32b, 33Mhz 0.07 W — TSEC I/O MII 0.01 W Multiply by number of interfaces used. GMII or TBI 0.07 W RGMII or RTBI 0.04 W CPM - FCC MII 0.015 W — RMII 0.013 W — HDLC 16 Mbps 0.009 W — UTOPIA-8 SPHY 0.06 W — UTOPIA-8 MPHY 0.1 W — UTOPIA-16 SPHY 0.094 W — UTOPIA-16 MPHY 0.135 W — |
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