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AN2014 데이터시트(PDF) 18 Page - STMicroelectronics |
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AN2014 데이터시트(HTML) 18 Page - STMicroelectronics |
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18 / 65 page ![]() Recommendations to improve EEPROM reliability AN2014 18/65 DocID10701 Rev 10 3 Recommendations to improve EEPROM reliability 3.1 Electrostatic discharges (ESD) ESD damage can happen any time during the product lifetime, from the moment it is delivered to the final field service operation. ESD damage can be destructive or latent. In the first case, a simple functional test can screen faulty devices; in the second case, the part is partially damaged and may be able to operate correctly, but its operating life may be drastically reduced, causing the device to fail prematurely in field service. 3.1.1 What is ESD? Static Electricity results from the contact and separation of two bodies, which creates an unbalance in the number of electrons at the surface of the bodies. Practically, the bodies become charged to a specific electrical potential that depends on the material from which they are made (see Table 2). An electrostatic discharge is defined as the transfer of charges between two bodies at different electrical potentials. It is instantaneous (a few nanoseconds) and thus induces high energy peaks which are very difficult to control and predict. 3.1.2 How to prevent ESD? An ESD can be managed if the discharge is driven through a known and controlled path on the silicon die. Specific design rules and techniques can be used by designers to better protect against ESDs, such as Faraday shields, perimeter ground lines or ground planes. In a production line, the part handling until the assembly line has to be carefully ESD- protected. 3.1.3 ST EEPROM ESD protection ST EEPROM devices offer a specific protection circuit against Human Body Model ESDs in accordance with AEC-Q100-002. During write operations, the EEPROM is much more sensitive to ESDs because of the architecture of its internal high voltage generator. Applications exposed to ESD should avoid writing data in the EEPROM when an ESD is more likely to occur. Table 2. ESD generation(1) 1. The charge unbalance depends on many factors such as the contact area, separation speed and relative humidity. ESD generation means Static voltage levels Walking across a carpet 1,500 V to 35,000 V Worker on a bench 100 V to 6,000 V Chair with urethane foam 1,500 V to 18,000 V |
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