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ST72324BJ2 데이터시트(PDF) 149 Page - STMicroelectronics |
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ST72324BJ2 데이터시트(HTML) 149 Page - STMicroelectronics |
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149 / 188 page ![]() ST72324B Electrical characteristics 149/188 NRW Write erase cycles TA=85°C 100 cycles TA=55°C 1000 cycles TPROG TERASE Programming or erasing temperature range -40 25 85 °C 1. Data based on characterization results, not tested in production. 2. VPP must be applied only during the programming or erasing operation and not permanently for reliability reasons. 3. Data based on simulation results, not tested in production. Table 100. Dual voltage HDFlash memory Symbol Parameter Conditions Min(1) Typ Max(1) Unit |
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